Publication: Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields
| col.comunidadvinculada | Comunidad científica colombiana | es_CO |
| col.contrato | 0284-2008 | es_CO |
| col.programa.colciencias | Programa nacional de ciencias básicas | es_CO |
| col.tipo.esp | Artículos de investigación | es_CO |
| dc.audience | Administradores de ciencia y tecnología | es_CO |
| dc.audience | Investigadores | es_CO |
| dc.coverage.spatial | Colombia | es_CO |
| dc.creator | López, F. E. | |
| dc.creator | Reyes Gómez, E. | |
| dc.creator | Brandi, H. S. | |
| dc.creator | Porras Montenegro, Nelson | |
| dc.creator | Oliveira, L. E. | |
| dc.creator.corporativo | Universidad del Valle, Univalle | es_CO |
| dc.creator.mail | nelmonte@univalle.edu.co | es_CO |
| dc.date.accessioned | 2018-08-02T22:34:14Z | |
| dc.date.available | 2018-08-02T22:34:14Z | |
| dc.date.embargoEnd | info:eu-repo/date/embargoEnd/2024-01-31 | es_CO |
| dc.date.issued | 2009-05 | |
| dc.description.abstract | The effects of a laser field on the conduction-electron effective Landé g factor in GaAs–Ga1−xAlxAs quantum wells and quantum-well wires under applied magnetic fields are studied within the effective-mass approximation. The interaction between the laser field and the semiconductor heterostructure is taken into account via a renormalization of the semiconductor energy gap and conduction-electron effective mass. Calculations are performed for the conduction-electron Landé factor and g-factor anisotropy by considering the non-parabolicity and anisotropy of the conduction band. Theoretical results are obtained as functions of the laser intensity, detuning and geometrical parameters of the low-dimensional semiconductor heterostructures, and indicate the possibility of manipulating and tuning the conduction-electron g factor in heterostructures by changing the detuning and laser-field intensity. | es_CO |
| dc.description.isproject | no | es_CO |
| dc.description.projectid | 1106-452-21296 | es_CO |
| dc.description.projectname | Control cuántico de las propiedades electrónicas y de espín en nanoestructuras inorgánicas, orgánicas y biológicas | es_CO |
| dc.description.sponsorship | Departamento Administrativo de Ciencia, Tecnología e Innovación [CO] Colciencias | es_CO |
| dc.format | es_CO | |
| dc.format.extent | 8 páginas | es_CO |
| dc.identifier.doi | 10.1088/0022-3727/42/11/115304 | |
| dc.identifier.issn | 0022-3727 | |
| dc.identifier.issn | 1361-6463 | |
| dc.identifier.uri | https://repositorio.minciencias.gov.co/handle/20.500.14143/18426 | |
| dc.language.iso | eng | es_CO |
| dc.relation.ispartof | Control cuántico de las propiedades electrónicas y de espín en nanoestructuras inorgánicas, orgánicas y biológicas. La publicación completa está disponible en : <a href="http://repositorio.colciencias.gov.co:80/handle/11146/18424" target="blank">http://repositorio.colciencias.gov.co:80/handle/11146/18424</a> | |
| dc.rights | info:eu-repo/semantics/embargoedAccess | es_CO |
| dc.source | Journal of Physics D: Applied Physics, Vol. 42, Num. 11; 2009 | es_CO |
| dc.source.bibliographicCitation | Contiene 16 referencias bibliográficas. Véase el documento adjunto | es_CO |
| dc.subject.spines | Campos magnéticos | |
| dc.subject.spines | Energía mecánica | |
| dc.subject.spines | Dispositivos semiconductores | |
| dc.subject.spines | Diodos semiconductores | |
| dc.subject.spines | Energía mecánica | |
| dc.title | Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields | es_CO |
| dc.type | Artículo científico | es_CO |
| dc.type.driver | info:eu-repo/semantics/article | es_CO |
| dc.type.hasversion | info:eu-repo/semantics/publishedVersion | es_CO |
| dspace.entity.type | Publication |