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Study of temperature and indium concentration-dependent dielectric constant and electron affinity effects on the exciton optical transition and binding energy in spherical GaSb–Ga1−xInxAsySb1−y–GaSb quantum dots

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col.comunidadvinculadaComunidad científica colombianaes_CO
col.contrato0284-2008es_CO
col.programa.colcienciasPrograma nacional de ciencias básicases_CO
col.tipo.espArtículos de investigaciónes_CO
dc.audienceAdministradores de ciencia y tecnologíaes_CO
dc.audienceInvestigadoreses_CO
dc.coverage.spatialColombiaes_CO
dc.creatorSánchez Cano, R.
dc.creatorPorras Montenegro, Nelson
dc.creator.corporativoUniversidad del Valle, Univallees_CO
dc.creator.mailnelmonte@univalle.edu.coes_CO
dc.date.accessioned2018-08-02T22:34:21Z
dc.date.available2018-08-02T22:34:21Z
dc.date.embargoEndinfo:eu-repo/date/embargoEnd/2024-01-31es_CO
dc.date.issued2010-06
dc.description.abstractWe have study the heavy-hole exciton states in GaSb–GaInAsSb–GaSb type-I spherical Quantum Dots, using temperature-dependent static dielectric constant and electron affinity, with a finite height potential barrier, as a function of the quantum dot radius for several values of Indium concentration. Our calculations have been worked out using interpolating methods to find the temperature and Indium concentration dependence of both the dielectric constant and electron affinity, in order to determine the conduction and valence band-offsets in GaSb–GaInAsSb–GaSb heterostructure by application of the Electron Affinity Rule. We have calculated the exciton binding energy and the corresponding transition energy from the exciton ground state to the heavy-hole level, using a variational procedure within the effective-mass approximation. We have found that the binding energy of the heavy-hole exciton presents changes due to the temperature dependence of the electron affinity and static dielectric constant. However, our results for the transition energy from the exciton ground state to the heavy-hole level coincide with those reported in a previous theoretical work, where we had found a very good agreement with photoluminescence and photoreflectance experimental studies at T=12 K in Ga1-xInxAsySb1-y films grown over GaSb substrates by liquid phase epitaxyes_CO
dc.description.isprojectnoes_CO
dc.description.projectid1106-452-21296es_CO
dc.description.projectnameControl cuántico de las propiedades electrónicas y de espín en nanoestructuras inorgánicas, orgánicas y biológicases_CO
dc.description.sponsorshipDepartamento Administrativo de Ciencia, Tecnología e Innovación [CO] Colcienciases_CO
dc.formatpdfes_CO
dc.format.extent8 páginases_CO
dc.identifier.doi10.1016/j.physe.2010.06.020
dc.identifier.issn1386-9477
dc.identifier.urihttps://repositorio.minciencias.gov.co/handle/20.500.14143/18427
dc.language.isoenges_CO
dc.relation.ispartofControl cuántico de las propiedades electrónicas y de espín en nanoestructuras inorgánicas, orgánicas y biológicas. La publicación completa está disponible en : <a href="http://repositorio.colciencias.gov.co:80/handle/11146/18424" target="blank">http://repositorio.colciencias.gov.co:80/handle/11146/18424</a>
dc.rightsinfo:eu-repo/semantics/embargoedAccesses_CO
dc.sourcePhysica E: Low-dimensional Systems and Nanostructures Vol 43, Issue 1, November 2010, pp. 76-80es_CO
dc.source.bibliographicCitationContiene 26 referencias bibliográficas. Véase el documento adjuntoes_CO
dc.subject.spinesTermodinámica
dc.subject.spinesCampos electromagnéticos
dc.subject.spinesEnergía mecánica
dc.titleStudy of temperature and indium concentration-dependent dielectric constant and electron affinity effects on the exciton optical transition and binding energy in spherical GaSb–Ga1−xInxAsySb1−y–GaSb quantum dotses_CO
dc.typeArtículo científicoes_CO
dc.type.driverinfo:eu-repo/semantics/articlees_CO
dc.type.hasversioninfo:eu-repo/semantics/publishedVersiones_CO
dspace.entity.typePublication

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