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Aluminum concentration and magnetic field effects on the Landé g factor in GaAs–(Ga,Al)As cylindrical quantum well wires

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col.comunidadvinculadaComunidad científica colombianaes_CO
col.contrato0284-2008es_CO
col.programa.colcienciasPrograma nacional de ciencias básicases_CO
col.tipo.espArtículos de investigaciónes_CO
dc.audienceAdministradores de ciencia y tecnologíaes_CO
dc.audienceInvestigadoreses_CO
dc.coverage.spatialColombiaes_CO
dc.creatorMejía Salazar, Jorge Ricardo
dc.creatorMulato Gómez, D. F.
dc.creatorPorras Montenegro, Nelson
dc.creator.corporativoUniversidad del Valle, Univallees_CO
dc.creator.mailnelmonte@univalle.edu.coes_CO
dc.date.accessioned2018-08-02T22:34:29Z
dc.date.available2018-08-02T22:34:29Z
dc.date.embargoEndinfo:eu-repo/date/embargoEnd/2024-01-31es_CO
dc.date.issued2010-02
dc.description.abstractWe have performed a theoretical study of the Aluminum concentration and axis-parallel applied magnetic-field effects on the conduction-electron Landé g factor in GaAs–(Ga,Al)As cylindrical quantum well wires. Numerical calculations are performed by using the Ogg–McCombe effective Hamiltonian, which includes nonparabolicity and anisotropy effects for the conduction-band electrons. The quantum wire is assumed to consist of an infinite length cylinder of GaAs, surrounded by Ga1−xAlxAs barrier. Theoretical results are given as functions of the Al concentration, radius and applied magnetic fields. We have studied the competition between the quantum-confinement (geometrical and barrier-potential confinements) and the magnetic field, finding that in this type of heterostructure the effects of the applied magnetic field are very small as compared with the Al concentration and geometrical-confinement effects. Present theoretical results are in very good agreement with previous theoretical findings for x=0.35.es_CO
dc.description.isprojectnoes_CO
dc.description.projectid1106-452-21296es_CO
dc.description.projectnameControl cuántico de las propiedades electrónicas y de espín en nanoestructuras inorgánicas, orgánicas y biológicases_CO
dc.description.sponsorshipDepartamento Administrativo de Ciencia, Tecnología e Innovación [CO] Colcienciases_CO
dc.formatpdfes_CO
dc.format.extent8 páginases_CO
dc.identifier.doi10.1016/j.physe.2010.02.006
dc.identifier.issn1386-9477
dc.identifier.urihttps://repositorio.minciencias.gov.co/handle/20.500.14143/18431
dc.language.isoenges_CO
dc.relation.ispartofControl cuántico de las propiedades electrónicas y de espín en nanoestructuras inorgánicas, orgánicas y biológicas. La publicación completa está disponible en : <a href="http://repositorio.colciencias.gov.co:80/handle/11146/18424" target="blank">http://repositorio.colciencias.gov.co:80/handle/11146/18424</a>
dc.rightsinfo:eu-repo/semantics/embargoedAccesses_CO
dc.sourcePhysica E: Low-dimensional Systems and Nanostructures Vol 42, Issue 7, May 2010, pp. 1911-1914es_CO
dc.source.bibliographicCitationContiene 33 referencias bibliográficas. Véase el documento adjuntoes_CO
dc.subject.keywordQuantum wires
dc.subject.keywordQuantum heterostructures
dc.subject.keywordG factor
dc.subject.spinesCampos magnéticos
dc.subject.spinesEnergía mecánica
dc.subject.spinesElectrones
dc.subject.spinesPartículas
dc.subject.spinesCampos magnéticos
dc.subject.spinesQuímica cuántica
dc.titleAluminum concentration and magnetic field effects on the Landé g factor in GaAs–(Ga,Al)As cylindrical quantum well wireses_CO
dc.typeArtículo científicoes_CO
dc.type.driverinfo:eu-repo/semantics/articlees_CO
dc.type.hasversioninfo:eu-repo/semantics/publishedVersiones_CO
dspace.entity.typePublication

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