2018-08-062018-08-062011-03https://repositorio.minciencias.gov.co/handle/20.500.14143/21670A computational study, employing a Floquet-transfer-matrix approach, of the current in a model two-step barrier diode under intense ac fields in the terahertz range is reported. It is demonstrated that the field pumps a net tunnel current through the structure, which can exhibit a negative differential resistance and whose direction can be controlled by the ac-bias amplitude. These behaviors are seen to originate from the inelastic scattering of incoming electrons by absorption or emission of field quanta from a shape resonance present in the field-free structure.pdf6 páginasenginfo:eu-repo/semantics/embargoedAccessReversible electron pumping and negative differential resistance in two-step barrier diode under strong terahertz ac fieldArtículo científico10.1063/1.3562309Teoría molecularConductores eléctricosTeoría de la informaciónAnálisis de sistemasModelos matemáticosElectrones -- Partículas